Domain pinning near a single-grain boundary in tetragonal and rhombohedral lead zirconate titanate films

• Published in: Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-04, Vol.9 (13)
• Main Authors: Marincel, Dan M., Zhang, H. R., Briston, J., Belianinov, Alex, Jesse, Stephen, Kalinin, Sergei V., Chen, L. Q., Rainforth, William M., Reaney, Ian M., Randall, Clive A., Trolier-McKinstry, Susan
• Format: Article
• Language: English
• Subjects: grain boundaries; MATERIALS SCIENCE; mesoscopic behavior; PbZr1−x,TixO3; PZT
• ISSN: 1098-0121; 1550-235X

The interaction of grain boundaries with ferroelectric domain walls strongly influences the extrinsic contribution to piezoelectric activity in Pb(Zr,Ti)O3 (PZT), ubiquitous in modern transducers and actuators. However, the fundamental understanding of these phenomena has been limited by complex mechanisms originating from the interplay of atomic-level domain wall pinning, collective domain wall dynamics, and emergent mesoscopic behavior. This contribution utilizes engineered grain boundaries created by depositing epitaxial PZT films with various Zr:Ti ratio onto 24º SrTiO3 tilt bicrystals. The nonlinear piezoelectric response and surface domain structure across the boundary are investigated using piezoresponse force microscopy whilst cross section domain structure is studied using transmission electron microscopy. The grain boundary reduces domain wall motion over a width of 800±70 nm for PZT 45:55 and 450±30 nm for PZT 52:48. Phase field modeling provides an understanding of the elastic and electric fields associated with the grain boundary and local domain configurations. In conclusion, this study demonstrates that complex mesoscopic behaviors can be explored to complement atomic-level pictures of the material system.