High-yield growth kinetics and spatial mapping of single-walled carbon nanotube forests at wafer scale

Emerging commercial applications of vertically aligned, single-walled carbon nanotube (SWCNT) “forests” require synthesis that minimizes nanotube diameter while maximizing number density across substrate areas exceeding centimeter scale. To address this need, we synthesized SWCNT forests on full sil...

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Bibliographic Details
Published in:Carbon (New York) 2020-04, Vol.159 (C), p.236-246
Main Authors: Meshot, Eric R., Park, Sei Jin, Buchsbaum, Steven F., Jue, Melinda L., Kuykendall, Tevye R., Schaible, Eric, Bayu Aji, Leonardus Bimo, Kucheyev, Sergei O., Wu, Kuang Jen J., Fornasiero, Francesco
Format: Article
Language:English
Subjects:
Backscattering
Carbon
Catalysts
Conversion
Forest growth
Kinetics
Mapping
MATERIALS SCIENCE
Nanotubes
Reaction kinetics
Silicon wafers
Single wall carbon nanotubes
Substrates
Synchrotron radiation
Synchrotrons
Wafers
X-ray scattering
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Summary:Emerging commercial applications of vertically aligned, single-walled carbon nanotube (SWCNT) “forests” require synthesis that minimizes nanotube diameter while maximizing number density across substrate areas exceeding centimeter scale. To address this need, we synthesized SWCNT forests on full silicon wafers with notable reproducibility and uniformity, and co-optimized growth for small diameters and high densities across large areas to access new territory in this 3D parameter space. We mapped the spatial uniformity of key structural features using Raman microscopy, synchrotron X-ray scattering, and Rutherford backscattering spectrometry. Low C2H2 flux over sub-nm Fe/Mo catalysts produced small-diameter SWCNTs (2.1 nm) at high number densities (2.26 × 1012 cm−2) on wafers up to 6 in. Although removing Mo resulted in larger SWCNT diameters and lower densities (
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2019.12.023