Impact of Crystallographic Orientation Disorders on Electronic Heterogeneities in Metal Halide Perovskite Thin Films

• Published in: Nano letters 2018-10, Vol.18 (10), p.6271-6278
• Main Authors: Foley, Benjamin J, Cuthriell, Shelby, Yazdi, Sina, Chen, Alexander Z, Guthrie, Stephanie M, Deng, Xiaoyu, Giri, Gaurav, Lee, Seung-Hun, Xiao, Kai, Doughty, Benjamin, Ma, Ying-Zhong, Choi, Joshua J
• Format: Article
• Language: English
• Subjects: crystallographic orientation; heterogeneity; lead halide perovskites; MATERIALS SCIENCE; trap sites
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.8b02417

Metal halide perovskite thin films have achieved remarkable performance in optoelectronic devices but suffer from spatial heterogeneity in their electronic properties. To achieve higher device performance and reliability needed for widespread commercial deployment, spatial heterogeneity of optoelectronic properties in the perovskite thin film needs to be understood and controlled. Clear identification of the causes underlying this heterogeneity, most importantly the spatial heterogeneity in charge trapping behavior, has remained elusive. Here, a multimodal imaging approach consisting of photoluminescence, optical transmission, and atomic force microscopy is utilized to separate electronic heterogeneity from morphology variations in perovskite thin films. By comparing the degree of heterogeneity in highly oriented and randomly oriented polycrystalline perovskite thin film samples, we reveal that disorders in the crystallographic orientation of the grains play a dominant role in determining charge trapping and electronic heterogeneity. This work also demonstrates a polycrystalline thin film with uniform charge trapping behavior by minimizing crystallographic orientation disorder. These results suggest that single crystals may not be required for perovskite thin film based optoelectronic devices to reach their full potential.