Direct observation of van der Waals stacking-dependent interlayer magnetism

Controlling the crystal structure is a powerful approach for manipulating the fundamental properties of solids. In van der Waals materials, this control can be achieved by modifying the stacking order through rotation and translation between the layers. Here, we observed stacking-dependent interlaye...

Full description

Saved in:
Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2019-11, Vol.366 (6468), p.983-987
Main Authors: Chen, Weijiong, Sun, Zeyuan, Wang, Zhongjie, Gu, Lehua, Xu, Xiaodong, Wu, Shiwei, Gao, Chunlei
Format: Article
Language:English
Subjects:
Antiferromagnetism
Atomic structure
Bilayers
Chromium
Chromium bromides
Coupling (molecular)
Crystal structure
Epitaxial growth
Ferromagnetism
Interlayers
Magnetic semiconductors
Magnetism
Magnets
Microscopy
Molecular beam epitaxy
Monolayers
Scanning tunneling microscopy
Science & Technology - Other Topics
Spectroscopy
Stacking
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Controlling the crystal structure is a powerful approach for manipulating the fundamental properties of solids. In van der Waals materials, this control can be achieved by modifying the stacking order through rotation and translation between the layers. Here, we observed stacking-dependent interlayer magnetism in the two-dimensional (2D) magnetic semiconductor chromium tribromide (CrBr ), which was enabled by the successful growth of its monolayer and bilayer through molecular beam epitaxy. Using in situ spin-polarized scanning tunneling microscopy and spectroscopy, we directly correlate the atomic lattice structure with the observed magnetic order. Although the individual monolayer CrBr is ferromagnetic, the interlayer coupling in bilayer depends on the stacking order and can be either ferromagnetic or antiferromagnetic. Our observations pave the way for manipulating 2D magnetism with layer twist angle control.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.aav1937