Rhenium ohmic contacts on 6H-SiC

Rhenium (Re) thin-film contacts (100-nm thick) were deposited on carbon-rich, nominally stoichiometric, and silicon-rich 6H–SiC surfaces, which were moderately doped with nitrogen (1.28×1018cm−3). Morphology (Dektak), phase formation (x-ray diffraction), chemistry (Auger electron spectroscopy), and...

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Published in:Journal of applied physics 2004-11, Vol.96 (9), p.5357-5364
Main Authors: McDaniel, G. Y., Fenstermaker, S. T., Lampert, W. V., Holloway, P. H.
Format: Article
Language:English
Subjects:
ANNEALING
AUGER ELECTRON SPECTROSCOPY
DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON BEAMS
GRAPHITE
INTERFACES
MATERIALS SCIENCE
MORPHOLOGY
NITROGEN
OXIDATION
RHENIUM
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
STOICHIOMETRY
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION
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cited_by cdi_FETCH-LOGICAL-c255t-91d1dc17970bf7a56d0968b625df113304ac74931128831e1072ae1a1ddf50f33
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container_issue 9
container_start_page 5357
container_title Journal of applied physics
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creator McDaniel, G. Y.
Fenstermaker, S. T.
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Holloway, P. H.
description Rhenium (Re) thin-film contacts (100-nm thick) were deposited on carbon-rich, nominally stoichiometric, and silicon-rich 6H–SiC surfaces, which were moderately doped with nitrogen (1.28×1018cm−3). Morphology (Dektak), phase formation (x-ray diffraction), chemistry (Auger electron spectroscopy), and electrical properties (I–V) were characterized for the as-deposited and annealed (120min, 1000°C, vacuum
doi_str_mv 10.1063/1.1797550
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The Re films on silicon-rich surfaces, stored in air at room temperature, resisted ex situ oxidation for approximately 24h. The annealed samples remained specular without visible signs of oxidation. The annealing resulted in a reduction in surface roughness for all the films regardless of substrate chemistry. The phase separation between carbon and rhenium was observed based on the formation of interfacial Re clusters and a ∼10-nm graphite surface layer after annealing. Auger data showed that Si layers (5–10nm) deposited to create Si-rich surfaces were partially consumed to form rhenium silicide during annealing, and the sharp Re∕Si∕SiC interface became more diffused with Re detected ∼50nm deeper into the structure. The annealing of Re films on moderately doped (1.28×1018cm−3) SiC resulted in ohmic contacts with an average specific contact resistance of 7.0×10−5Ωcm2 for stoichiometric and 1.6×10−5Ωcm2 for silicon-rich samples. 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Y.</creatorcontrib><creatorcontrib>Fenstermaker, S. T.</creatorcontrib><creatorcontrib>Lampert, W. V.</creatorcontrib><creatorcontrib>Holloway, P. H.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>McDaniel, G. Y.</au><au>Fenstermaker, S. T.</au><au>Lampert, W. V.</au><au>Holloway, P. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Rhenium ohmic contacts on 6H-SiC</atitle><jtitle>Journal of applied physics</jtitle><date>2004-11-01</date><risdate>2004</risdate><volume>96</volume><issue>9</issue><spage>5357</spage><epage>5364</epage><pages>5357-5364</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Rhenium (Re) thin-film contacts (100-nm thick) were deposited on carbon-rich, nominally stoichiometric, and silicon-rich 6H–SiC surfaces, which were moderately doped with nitrogen (1.28×1018cm−3). Morphology (Dektak), phase formation (x-ray diffraction), chemistry (Auger electron spectroscopy), and electrical properties (I–V) were characterized for the as-deposited and annealed (120min, 1000°C, vacuum &lt;1×10−6Torr) contacts. As-deposited films were nonohmic. Films grown on carbon-rich surfaces were nonspecular, granular, and often delaminated during characterization. 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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects ANNEALING
AUGER ELECTRON SPECTROSCOPY
DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON BEAMS
GRAPHITE
INTERFACES
MATERIALS SCIENCE
MORPHOLOGY
NITROGEN
OXIDATION
RHENIUM
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
STOICHIOMETRY
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION
title Rhenium ohmic contacts on 6H-SiC
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