Monolithic integration of AlGaInP laser diodes on SiGe∕Si substrates by molecular beam epitaxy

Room temperature operation of visible AlGaInP laser diodes epitaxially integrated on Si was demonstrated. Compressively strained laser heterostructures were grown by molecular beam epitaxy (MBE) on low dislocation density SiGe∕Si substrates, where the threading dislocation density of the top relaxed...

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Bibliographic Details
Published in:Journal of applied physics 2006-07, Vol.100 (1)
Main Authors: Kwon, O., Boeckl, J. J., Lee, M. L., Pitera, A. J., Fitzgerald, E. A., Ringel, S. A.
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
CURRENT DENSITY
DENSITY
DISLOCATIONS
GALLIUM COMPOUNDS
GERMANIUM SILICIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
INTEGRATED CIRCUITS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
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Summary:Room temperature operation of visible AlGaInP laser diodes epitaxially integrated on Si was demonstrated. Compressively strained laser heterostructures were grown by molecular beam epitaxy (MBE) on low dislocation density SiGe∕Si substrates, where the threading dislocation density of the top relaxed Ge layers was measured in the range of 2×106cm−2. A threshold current density of Jth∼1.65kA∕cm2 for the as-cleaved, gain-guided AlGaInP laser grown on SiGe∕Si was obtained at the peak emission wavelength of 680nm under pulsed mode current injection. These results show that not only can high quality AlGaInP materials grown by MBE be achieved on Si via relaxed SiGe interlayers, but the prototype demonstration of laser diode operation on Si illustrates that very defect sensitive optoelectronics in the III-P system can indeed be integrated with Si substrates by heteroepitaxial methods.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2209068