Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without suc...

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Bibliographic Details
Published in:Journal of applied physics 2008-05, Vol.103 (10), p.104901-104901-6
Main Authors: Tanoto, H., Yoon, S. F., Loke, W. K., Chen, K. P., Fitzgerald, E. A., Dohrman, C., Narayanan, B.
Format: Article
Language:English
Subjects:
CRYSTAL GROWTH
GALLIUM ARSENIDES
GERMANIUM
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NEUTRON DIFFRACTION
NUCLEATION
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
X-RAY DIFFRACTION
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Summary:In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample where the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2921835