Chemical composition and thermal stability of GaAs oxides grown by AFM anodic oxidation for site-controlled growth of InAs quantum dots

We have fabricated GaAs oxides by using atomic force microscope (AFM)-assisted anodic oxidation at various bias voltages, V{sub ox}, and studied their chemical compositions and thermal stabilities. The oxides grown at bias voltages less than 30 V desorbed after standard thermal cleaning in molecular...

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Bibliographic Details
Published in:AIP conference proceedings 2011-01, Vol.1399 (1)
Main Authors: Cha, K. M., Shibata, K., Horiuchi, I., Kamiko, M., Yamamoto, R., Hirakawa, K., INQIE, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, CREST-JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012
Format: Article
Language:English
Subjects:
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC FORCE MICROSCOPY
CHALCOGENIDES
CHEMICAL COMPOSITION
CHEMICAL REACTIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
EMISSION
EMISSION SPECTROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM OXIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MATERIALS SCIENCE
MICROSCOPY
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
NUCLEATION
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHASE STABILITY
PHOTOEMISSION
PNICTIDES
QUANTUM DOTS
SECONDARY EMISSION
SPECTROSCOPY
STABILITY
SURFACES
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Summary:We have fabricated GaAs oxides by using atomic force microscope (AFM)-assisted anodic oxidation at various bias voltages, V{sub ox}, and studied their chemical compositions and thermal stabilities. The oxides grown at bias voltages less than 30 V desorbed after standard thermal cleaning in molecular beam epitaxy, while the oxide patterns fabricated at V{sub ox}{>=}40 V survived on the surface. We have further investigated the chemical composition of the oxides by X-ray photoemission spectroscopy. It has been found that the AFM oxides grown at V{sub ox}{approx}10 V predominantly consist of Ga{sub 2}O and GaO, whereas those grown at V{sub ox}{approx}50 V contain a Ga{sub 2}O{sub 3}-component. This result indicates that the better thermal stability of AFM oxides grown at V{sub ox}{>=}40 V can be attributed to the formation of Ga{sub 2}O{sub 3}. We grew a GaAs buffer layer on the oxide nanomasks and obtained nanoholes. After supplying InAs, selective dot nucleation took place in the nanoholes, resulting in successful formation of site-controlled QDs.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3666343