Fe-doped InN layers grown by molecular beam epitaxy

Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by...

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Bibliographic Details
Published in:Applied physics letters 2012-10, Vol.101 (17)
Main Authors: Wang, Xinqiang, Liu, Shitao, Ma, Dingyu, Zheng, Xiantong, Chen, Guang, Xu, Fujun, Tang, Ning, Shen, Bo, Zhang, Peng, Cao, Xingzhong, Wang, Baoyi, Huang, Sen, Chen, Kevin J., Zhou, Shengqiang, Yoshikawa, Akihiko
Format: Article
Language:English
Subjects:
DENSITY
DOPED MATERIALS
ELECTRON DENSITY
ELECTRON MOBILITY
GALLIUM NITRIDES
High density
IMPURITIES
INDIUM NITRIDES
Iron
IRON ADDITIONS
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
PHOTOLUMINESCENCE
Pits
QUENCHING
Quenching (cooling)
REDUCTION
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SURFACES
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Summary:Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4764013