Point defects introduced by InN alloying into In{sub x}Ga{sub 1-x}N probed using a monoenergetic positron beam

Native defects in In{sub x}Ga{sub 1-x}N (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for In{sub x}Ga{sub 1-x}N show...

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Bibliographic Details
Published in:Journal of applied physics 2013-03, Vol.113 (12)
Main Authors: Uedono, A., Tsutsui, T., Watanabe, T., Kimura, S., Zhang, Y., Lozac'h, M., National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Sang, L. W., Sumiya, M., Ishibashi, S.
Format: Article
Language:English
Subjects:
ANNIHILATION
CHEMICAL VAPOR DEPOSITION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
CRYSTALS
DIFFUSION
DOPPLER BROADENING
ELECTRIC FIELDS
GALLIUM ADDITIONS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
INDIUM NITRIDES
INTERFACES
MATERIALS SCIENCE
NITROGEN COMPOUNDS
ORGANOMETALLIC COMPOUNDS
POSITRON BEAMS
SEMICONDUCTOR MATERIALS
SPECTRA
TRAPPING
VACANCIES
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Summary:Native defects in In{sub x}Ga{sub 1-x}N (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for In{sub x}Ga{sub 1-x}N showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the In{sub x}Ga{sub 1-x}N/GaN interface was close to that in defect-free GaN or In{sub x}Ga{sub 1-x}N, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the In{sub x}Ga{sub 1-x}N/GaN interface.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4795815