Physical properties and applications of In{sub x}Ga{sub 1−x}N nanowires

We have successfully grown In{sub x}Ga{sub 1−x}N nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. In{sub x}Ga{sub 1−...

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Bibliographic Details
Published in:AIP conference proceedings 2014-05, Vol.1598 (1)
Main Authors: Segura-Ruiz, J., Gómez-Gómez, M., Garro, N., Cantarero, A., Martínez-Criado, G., Denker, C., Malindretos, J., Rizzi, A.
Format: Article
Language:English
Subjects:
CONCENTRATION RATIO
CRYSTALS
EMISSION SPECTRA
EMISSION SPECTROSCOPY
FLUORESCENCE
GALLIUM NITRIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
OPTICAL MODES
PHOTOLUMINESCENCE
QUANTUM WIRES
RAMAN EFFECT
RAMAN SPECTROSCOPY
SILICON
SUBSTRATES
X RADIATION
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Summary:We have successfully grown In{sub x}Ga{sub 1−x}N nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. In{sub x}Ga{sub 1−x}N is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowires help to explain this contradictory result.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4878288