On the doping limit for strain stability retention in phosphorus doped Si:C

Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below β-SiC precipitation th...

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Bibliographic Details
Published in:Journal of applied physics 2014-07, Vol.116 (3)
Main Authors: Chuang, Yao-Teng, Hu, Kuan-Kan, Woon, Wei-Yen
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
CARBON
CARBON COMPOUNDS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
FOURIER TRANSFORM SPECTROMETERS
Fourier transforms
GETTERING
HALL EFFECT
ION IMPLANTATION
Phosphorus
PHOSPHORUS ADDITIONS
PRECIPITATION
RELAXATION
RESOLUTION
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
STABILITY
Strain relaxation
STRAINS
X ray spectra
X-RAY DIFFRACTION
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Summary:Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below β-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further β-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4890303