Mechanical property changes in porous low- k dielectric thin films during processing

The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric c...

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Bibliographic Details
Published in:Applied physics letters 2014-10, Vol.105 (15)
Main Authors: Stan, G., Gates, R. S., Kavuri, P., Torres, J., Michalak, D., Ege, C., Bielefeld, J., King, S. W.
Format: Article
Language:English
Subjects:
Applied physics
ATOMIC FORCE MICROSCOPY
CHARGES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER
Crosstalk
DIELECTRIC MATERIALS
Dielectric properties
Elastic properties
Field programmable gate arrays
MECHANICAL PROPERTIES
Modulus of elasticity
PERMITTIVITY
POROSITY
POROUS MATERIALS
PROCESSING
RESONANCE
THIN FILMS
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Summary:The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric constant by increasing the porosity of materials, for example, can adversely affect their mechanical integrity during processing. By using load-dependent contact-resonance atomic force microscopy, the changes in the elastic modulus of low-k dielectric materials due to processing were accurately measured. These changes were linked to alterations sustained by the structure of low-k dielectric films during processing. A two-phase model was used for quantitative assessments of the elastic modulus changes undergone by the organosilicate skeleton of the structure of porous and pore-filled dielectrics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4898351