Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

The Tunneling Field-Effect Transistor (TFET) is a promising device for future low-power logic. Its performance is often predicted using semiclassical simulations, but there is usually a large discrepancy with experimental results. An important reason is that Field-Induced Quantum Confinement (FIQC)...

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Bibliographic Details
Published in:Applied physics letters 2014-11, Vol.105 (20)
Main Authors: Smets, Quentin, Verhulst, Anne S., Martens, Koen, Lin, Han Chung, Kazzi, Salim El, Verreck, Devin, Simoen, Eddy, Collaert, Nadine, Thean, Aaron, Raskin, Jean-Pierre, Heyns, Marc M.
Format: Article
Language:English
Subjects:
Applied physics
CAPACITORS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Computer simulation
Conduction bands
DOPED MATERIALS
Electrical measurement
FIELD EFFECT TRANSISTORS
FORECASTING
Predictions
Quantum confinement
QUANTUM MECHANICS
SEMICLASSICAL APPROXIMATION
Semiconductor devices
SILICON OXIDES
SIMULATION
TUNNEL EFFECT
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Summary:The Tunneling Field-Effect Transistor (TFET) is a promising device for future low-power logic. Its performance is often predicted using semiclassical simulations, but there is usually a large discrepancy with experimental results. An important reason is that Field-Induced Quantum Confinement (FIQC) is neglected. Quantum mechanical simulations show FIQC delays the onset of Band-To-Band Tunneling (BTBT) with hundreds of millivolts in the promising line-TFET configuration. In this letter, we provide experimental verification of this delayed onset. We accomplish this by developing a method where line-TFET are modeled using highly doped MOS capacitors (MOS-CAP). Using capacitance-voltage measurements, we demonstrate AC inversion by BTBT, which was so far unobserved in MOS-CAP. Good agreement is shown between the experimentally obtained BTBT onset and quantum mechanical predictions, proving the need to include FIQC in all TFET simulations. Finally, we show that highly doped MOS-CAP is promising for characterization of traps deep into the conduction band.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4902117