Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model—based on a set of coupled reaction-diffusion equations, one for each facet in the system—accounts for the...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2015-04, Vol.117 (16), p.164313
Main Authors: Moroni, Stefano T., Dimastrodonato, Valeria, Chung, Tung-Hsun, Juska, Gediminas, Gocalinska, Agnieszka, Vvedensky, Dimitri D., Pelucchi, Emanuele
Format: Article
Language:English
Subjects:
Adatoms
ALUMINIUM ARSENIDES
Applied physics
ATOMIC FORCE MICROSCOPY
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
DECOMPOSITION
DIFFUSION
ELECTRON SCANNING
GALLIUM ARSENIDES
Grooves
INDIUM ARSENIDES
Indium gallium arsenides
LIFETIME
Mathematical models
Metalorganic chemical vapor deposition
Nanostructure
NANOWIRES
OPTICAL PROPERTIES
Parameters
QUANTUM DOTS
Quantum wires
Reaction-diffusion equations
Recesses
SEGREGATION
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
V grooves
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model—based on a set of coupled reaction-diffusion equations, one for each facet in the system—accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature-, concentration-, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In0.12Ga0.88As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In0.25Ga0.75As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4919362