Silicon junctionless field effect transistors as room temperature terahertz detectors

• Published in: Journal of applied physics 2015-09, Vol.118 (10)
• Main Authors: Marczewski, J., Knap, W., Tomaszewski, D., Zaborowski, M., Zagrajek, P.
• Format: Article
• Language: English
• Subjects: Circuits; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Field effect transistors; Low resistance; MOSFET; MOSFETs; NOISE; Open channels; OXIDES; Photolithography; RADIATION DETECTION; Room temperature; Semiconductor devices; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 0273-0400 K; Thermal noise; Transistors; VELOCITY
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.4929967

Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that the junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.