High-voltage MIS-gated GaN transistors

Transistors with a high electron mobility based on AlGaN/GaN epitaxial heterostructures are promising component types for creating high-power electronic devices of the next generation. This is due both to a high charge-carrier mobility in the transistor channel and a high electric durability of the...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-09, Vol.51 (9), p.1229-1232
Main Authors: Erofeev, E. V., Fedin, I. V., Fedina, V. V., Stepanenko, M. V., Yuryeva, A. V.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
CARRIER MOBILITY
CHARGE CARRIERS
Current carriers
DOPED MATERIALS
Electric charge
ELECTRON MOBILITY
Electronic devices
ELECTRONIC EQUIPMENT
ENERGY LOSSES
Epitaxy
GALLIUM NITRIDES
Heterostructures
LABELLING
Liquor
Magnesium
Magnetic Materials
Magnetism
MASS SPECTROSCOPY
MATERIALS SCIENCE
MIS (semiconductors)
NUCLEAR MAGNETIC RESONANCE
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Semiconductor devices
SEMICONDUCTOR MATERIALS
Switching
Thickness
Threshold voltage
TRANSISTORS
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Summary:Transistors with a high electron mobility based on AlGaN/GaN epitaxial heterostructures are promising component types for creating high-power electronic devices of the next generation. This is due both to a high charge-carrier mobility in the transistor channel and a high electric durability of the material making it possible to achieve high breakdown voltages. For use in power switching devices, normally off GaN transistors operating in the enrichment mode are required. To create normally off GaN transistors, the subgate region on the basis of p -GaN doped with magnesium is more often used. However, optimization of the p -GaN epitaxial-layer thickness and doping level makes it possible to achieve a threshold voltage close to V th = +2 V for the on-mode of GaN transistors. In this study, it is shown that the use of a subgate MIS (metal–insulator–semiconductor) structure involved in p -GaN transistors results in an increase in the threshold voltage for the on-mode to V th = +6.8 V, which depends on the subgate-insulator thickness in a wide range. In addition, it is established that the use of the MIS structure results in a decrease in the initial transistor current and the gate current in the on mode, which enables us to decrease the energy losses when controlling powerful GaN transistors.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261709010X