Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

• Published in: ACS nano 2024-07, Vol.18 (28), p.18151-18159
• Main Authors: Yang, Jerry A., Bennett, Robert K. A., Hoang, Lauren, Zhang, Zhepeng, Thompson, Kamila J., Michail, Antonios, Parthenios, John, Papagelis, Konstantinos, Mannix, Andrew J., Pop, Eric
• Format: Article
• Language: English
• Subjects: 2D materials; biaxial strain; mobility; MoS2; transistors; WS2
• ISSN: 1936-0851; 1936-086X; 1936-086X
• DOI: 10.1021/acsnano.3c08996

Strain engineering can modulate the properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS2, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well characterized in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe electron transport in monolayer WS2 and MoS2 transistors. This approach experimentally achieves ∼2× higher on-state current and mobility with ∼0.3% applied biaxial strain in WS2, the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron–phonon scattering. These results underscore the role of strain engineering in 2D semiconductors for flexible electronics, sensors, integrated circuits, and other optoelectronic applications.