Semi-insulating InP grown at low temperature by metalorganic chemical vapor deposition

The growth of semi-insulating epitaxial InP layers at low substrate temperature (460 °C) by low-pressure metalorganic chemical vapor deposition has been demonstrated using CCl4 as a dopant source. The resistivity of the material is a function of diluted CCl4 flow rate used during growth. For flow ra...

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Bibliographic Details
Published in:Applied physics letters 1994-07, Vol.65 (3), p.359-361
Main Authors: Gardner, Nathan F., Hartmann, Quesnell J., Stockman, Stephen A., Stillman, Gregory E., Baker, Judith E., Malin, Jay I., Hsieh, K. C.
Format: Article
Language:English
Subjects:
360602 - Other Materials- Structure & Phase Studies
360606 - Other Materials- Physical Properties- (1992-)
AMBIENT TEMPERATURE
ANNEALING
COATINGS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EPITAXY
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LUMINESCENCE
MATERIALS SCIENCE
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
THIN FILMS
VAPOR DEPOSITED COATINGS
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Summary:The growth of semi-insulating epitaxial InP layers at low substrate temperature (460 °C) by low-pressure metalorganic chemical vapor deposition has been demonstrated using CCl4 as a dopant source. The resistivity of the material is a function of diluted CCl4 flow rate used during growth. For flow rates less than 5 sccm the material is n type, but for higher flows the resistivity of the material is approximately 5×109 Ω cm. The semi-insulating behavior of the material is maintained after annealing at 600 °C. Transmission electron microscopy does not reveal the presence of phosphorus precipitates in as-grown samples or in samples annealed at 400 and 600 °C. There is significant carbon, hydrogen, and chlorine incorporation in the layers, as measured by secondary ion mass spectrometry. Room-temperature photoluminescence measurements suggest that nonradiative recombination is significant in the material and increases in samples grown with higher CCl4 flows.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112374