Loading…

Effect of Native Defects on Optical Properties of InxGa1-xNAlloys

The energy position of the optical absorption edge and the free carrier populations in In{sub x}Ga{sub 1-x}N ternary alloys can be controlled using high energy {sup 4}He{sup +} irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2005-05, Vol.87 (16)
Main Authors: Li, S.X., Haller, E.E., Yu, K.M., Walukiewicz, W., Ager III,J.W., Wu, J., Shan, W., Lu, Hai, Schaff, William J.
Format: Article
Language:English
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The energy position of the optical absorption edge and the free carrier populations in In{sub x}Ga{sub 1-x}N ternary alloys can be controlled using high energy {sup 4}He{sup +} irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in In{sub x}Ga{sub 1-x}N are in excellent agreement with the predictions of the amphoteric defect model.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2108118