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Effect of Native Defects on Optical Properties of InxGa1-xNAlloys
The energy position of the optical absorption edge and the free carrier populations in In{sub x}Ga{sub 1-x}N ternary alloys can be controlled using high energy {sup 4}He{sup +} irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the...
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Published in: | Applied physics letters 2005-05, Vol.87 (16) |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | The energy position of the optical absorption edge and the free carrier populations in In{sub x}Ga{sub 1-x}N ternary alloys can be controlled using high energy {sup 4}He{sup +} irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in In{sub x}Ga{sub 1-x}N are in excellent agreement with the predictions of the amphoteric defect model. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2108118 |