Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications-Part I: Process Development

Although horizontally-aligned carbon nanotube (HACNT) interconnects are the most common scenarios that have been modeled and analyzed in theoretical research, fabrication of HACNT test structures has remained an enigma until now. Through addressing several fabrication challenges, this paper reports...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-09, Vol.60 (9), p.2862-2869
Main Authors: Hong Li, Wei Liu, Cassell, Alan M., Kreupl, Franz, Banerjee, Kaustav
Format: Article
Language:English
Subjects:
Applied sciences
Carbon nanotubes
Carbon nanotubes (CNTs)
chemical vapor deposition
Conductivity
contact
Cross-disciplinary physics: materials science
rheology
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Fabrication
horizontally aligned
interconnects
Lithography
Manhattan structure
Materials science
Metals
Microelectronic fabrication (materials and surfaces technology)
Nanoscale materials and structures: fabrication and characterization
Nanotubes
Physics
resistivity
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Substrates
Testing, measurement, noise and reliability
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Summary:Although horizontally-aligned carbon nanotube (HACNT) interconnects are the most common scenarios that have been modeled and analyzed in theoretical research, fabrication of HACNT test structures has remained an enigma until now. Through addressing several fabrication challenges, this paper reports a novel process that enables fabrication of high-density, long (over hundred microns), and thick (up to micrometer) HACNT interconnects. Furthermore, horizontal CNT-based 2-D Manhattan structure is demonstrated by properly designing the catalyst and flattening process. These structures are crucial for building angled interconnects and on-chip passive devices. In addition, to address the contact issue between metal and thick HACNT bundles, a multistep lithography combined with specifically designed metal deposition technique is performed to ensure full contact configuration. Using such a process, test structures with arrays of various sizes of HACNT bundle interconnects are fabricated. The process developed in this paper provides an important platform for future research and technology development of CNT-based interconnects and passive elements.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2275259