InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz

The top-illuminated InGaAs PIN photodiodes have been fabricated from materials grown by metalorganic vapor phase epitaxy. Using the planar air-bridge approach and the selective etching technique, it can eliminate the significant bondpad capacitance which is present in conventional PIN photodiodes on...

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Bibliographic Details
Published in:Solid-state electronics 1995, Vol.38 (7), p.1295-1298
Main Authors: Wen-Jeng Ho, Ting-Arn Dai, Zuon-Ming Chuang, Wei Lin, Yuan-Kuang Tu, Meng-Chyi Wu
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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