Low threshold 1.5 μm quantum well lasers with continuous linear-graded-index InGaAsP layers prepared by organometallic vapor-phase epitaxy

We report quantum well heterostructures with continuous linear-graded-index quaternary (CL-GRIN-QW) prepared by low-pressure organometallic vapor-phase epitaxy for the first time, by adopting the empirical flow-rate formulas. The linear compositional profile has been confirmed using secondary ion ma...

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Bibliographic Details
Published in:	Applied physics letters 1993-03, Vol.62 (11), p.1239-1241
Main Authors:	Lin, Wei, Chang, Chwan-Yang, Tu, Yuan-Kuang, Dai, Ting-Arn, Ho, Wen-Jeng, Lee, Gwo-Yue, Shi, Tian-Tsorng, Shiao, Hung-Pin
Format:	Article
Language:	English
Subjects:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
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