SEU simulation and testing of resistor-hardened D-latches in the SA3300 microprocessor

The SEU tolerance of the SA3300 microprocessor with feedback resistors is presented and compared to the SA3300 without feedback resistors and to the commercial version (NS32016). Upset threshold at room temperature increased from 23 MeV-cm/sup 2//mg with no feedback resistors to 60 MeV-cm/sup 2//mg...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1991-12, Vol.38 (6), p.1521-1528
Main Authors: Sexton, F.W., Corbett, W.T., Treece, R.K., Hass, K.J., Hughes, K.L., Axness, C.L., Hash, G.L., Shaneyfelt, M.R., Wunsch, T.F.
Format: Article
Language:English
Subjects:
440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems
661320 - Auroral, Ionospheric, & Magnetospheric Phenomena- (1992-)
990200 - Mathematics & Computers
ANALOG SYSTEMS
Analytical models
Applied sciences
CHARGE COLLECTION
Circuit simulation
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPUTERS
CORRELATIONS
DIFFUSION
DOPED MATERIALS
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
Electronics
ENERGY
Error analysis
ERRORS
Exact sciences and technology
FEEDBACK
FUNCTIONAL MODELS
GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
HARDENING
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Integrated circuits
Integrated circuits by function (including memories and processors)
Laboratories
Laser feedback
MATERIALS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
Registers
RESISTORS
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SIMULATION
SIMULATORS
SUBSTRATES
Temperature
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TESTING
THRESHOLD ENERGY
TOLERANCE
VARIATIONS
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Summary:The SEU tolerance of the SA3300 microprocessor with feedback resistors is presented and compared to the SA3300 without feedback resistors and to the commercial version (NS32016). Upset threshold at room temperature increased from 23 MeV-cm/sup 2//mg with no feedback resistors to 60 MeV-cm/sup 2//mg and 180 MeV-cm/sup 2//mg with feedback resistors of 50 k Omega and 160 k Omega , respectively. The performance goal of 10 MHz over the full temperature range of -55 degrees C to +125 degrees C is exceeded for feedback resistors of 160 k Omega and less. Error rate calculations for this design predict that the error rate is less than once every 100 years when 50 k Omega feedback resistors are used in the D-latch design. Analysis of the SEU response using a lumped-parameter circuit simulator imply a charge collection depth of 4.5 mu m. This is much deeper than what one would expect for prompt collection in the epi and funnel regions and has been explained in terms of diffusion current in the heavily doped substrate.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.124141