Dielectric Properties of Au/PVA (Cobalt-Doped)/n-Si Photoconductive Diodes

• Published in: Journal of electronic materials 2013, Vol.42 (1), p.103-108
• Main Author: Gökçen, M.
• Format: Article
• Language: English
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity; Dielectric properties; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Diodes; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Electronics and Microelectronics; Exact sciences and technology; Instrumentation; Materials; Materials Science; Optical and Electronic Materials; Photochemistry; Physics; Solid State Physics
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-012-2332-y

The voltage ( V ) and frequency ( f ) dependence of dielectric parameters such as the dielectric constant ( ε ′), dielectric loss ( ε ″), dielectric loss tangent (tan  δ ), real and imaginary parts of electrical modulus ( M ′ and M ″), and alternating-current (AC) electrical conductivity ( σ AC ) of Au/PVA (cobalt-doped)/ n -Si structures have been investigated by using experimental admittance measurements conducted at room temperature. The values of ε ′, ε ″, and tan  δ were found to be strong functions of voltage and frequency, especially at low frequencies in the positive voltage region. It was observed that the values of ε ′ and ε ″ increase as the frequency decreases. The M ′ values increase with increasing frequency due to increasing dielectric relaxation, while M ″ values, in general, remain stable as frequency is changed. The σ AC values at each bias voltage increase with increasing frequency.