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Series-Connected IGBTs Using Active Voltage Control Technique

With series insulated-gate bipolar transistor (IGBT) operation, well-matched gate drives will not ensure balanced dynamic voltage sharing between the switching devices. Rather, it is IGBT parasitic capacitances, mainly gate-to-collector capacitance C gc , that dominate transient voltage sharing. As...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2013-08, Vol.28 (8), p.4083-4103
Main Authors: Lim, T. C., Williams, B. W., Finney, S. J., Palmer, P. R.
Format: Article
Language:English
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Summary:With series insulated-gate bipolar transistor (IGBT) operation, well-matched gate drives will not ensure balanced dynamic voltage sharing between the switching devices. Rather, it is IGBT parasitic capacitances, mainly gate-to-collector capacitance C gc , that dominate transient voltage sharing. As C gc is collector voltage dependant and is significantly larger during the initial turn-off transition, it dominates IGBT dynamic voltage sharing. This paper presents an active control technique for series-connected IGBTs that allows their dynamic voltage transition dV ce /dt to adaptively vary. Both switch ON and OFF transitions are controlled to follow a predefined dV ce /dt. Switching losses associated with this technique are minimized by the adaptive dv/dt control technique incorporated into the design. A detailed description of the control circuits is presented in this paper. Experimental results with up to three series devices in a single-ended dc chopper circuit, operating at various low voltage and current levels, are used to illustrate the performance of the proposed technique.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2012.2227812