Numerical Simulation of Third-Generation HgCdTe Detector Pixel Arrays

In this paper, we present a physics-based full 3-D numerical simulation model of third-generation infrared (IR) detector pixel arrays. The approach avoids geometrical simplifications typical of 1-D and 2-D models that can introduce errors which are difficult to quantify. We have used a finite-differ...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2013-09, Vol.19 (5), p.1-15
Main Authors: Schuster, J., Pinkie, B., Tobin, S., Keasler, C., D'Orsogna, D., Bellotti, E.
Format: Article
Language:English
Subjects:
Arrays
Computational modeling
Computer simulation
Detectors
Equations
Infrared detectors
Infrared radiation
Intermetallics
Materials
Mathematical analysis
Mathematical model
Mathematical models
mercury cadmium telluride
multispectral detectors
Numerical models
numerical simulation
photon-trapping
photonic crystals
photovoltaic detectors
Pixels
Time-domain analysis
two-color detectors
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Summary:In this paper, we present a physics-based full 3-D numerical simulation model of third-generation infrared (IR) detector pixel arrays. The approach avoids geometrical simplifications typical of 1-D and 2-D models that can introduce errors which are difficult to quantify. We have used a finite-difference time-domain technique to compute the optical characteristics including the reflectance and the carrier generation rate in the device. Subsequently, we employ the finite-element method to solve the drift-diffusion equations on a mixed-element grid to compute the electrical characteristics including the I(V) characteristics and quantum efficiency. Furthermore, we have used this model to study HgCdTe two-color detectors that operate in the medium-wave to long-wave IR and photovoltaic pixel arrays employing a photon-trapping structure realized with a periodic array of pillars that operate in the medium-wave IR.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2013.2256340