Organic photovoltaic annealing process analysis using impedance spectroscopy

[Display omitted] •Organic solar cells based on P3HT:PCBM fabricated in different processes were investigated.•The device performance was monitored, and the properties of layers and interfaces were analyzed.•The effect of the device’s fabrication process on the device’s performance was predicted. Or...

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Bibliographic Details
Published in:Solar energy 2017-03, Vol.144, p.367-375
Main Authors: Ke, Lin, Zhang, Nan, Low, Edna, Wang, Rui, Kam, Zhi Ming, Wang, Xizu, Liu, Bin, Zhang, Jie
Format: Article
Language:English
Subjects:
Annealing
Impedance
P3HT:PCBM
Photovoltaic
Photovoltaic cells
Solar energy
Spectrum analysis
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Summary:[Display omitted] •Organic solar cells based on P3HT:PCBM fabricated in different processes were investigated.•The device performance was monitored, and the properties of layers and interfaces were analyzed.•The effect of the device’s fabrication process on the device’s performance was predicted. Organic solar cells based on P3HT:PCBM without annealing process, with annealing process before and after cathode deposition have been investigated in dark and under light by using high magnitude and phase resolution impedance spectrometer. The impedance data in dark can be interpreted as the properties and positions of layers and interfaces of the sample to nanoscale range. Therefore, the fabrication process and device nanoscale layer and interface quality can be monitored. Under light conditions, the impedance data obtained were fitted into equivalent circuit and electronic parameters such as diffusion time of electrons, τd and effective carrier lifetime, τn were calculated. Correlation of the nanoscale layers and interface parameters to the dynamic carrier performance parameters were established. Applying the high magnitude and phase resolution impedance method to understand the properties of organic thin-film solar cells in both static and dynamic status will give useful insights not only on the device performance improvement in terms of process, layer morphology and interfaces quality; but also deeper understanding of how the device kinetic characteristics at the interface states induced correlate with the improvement of current-potential characteristics under device operation conditions.
ISSN:0038-092X
1471-1257
DOI:10.1016/j.solener.2017.01.044