Geometry‐induced quantum effects in periodic nanostructures

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2017-07, Vol.214 (7), p.n/a
• Main Authors: Tavkhelidze, A., Jangidze, L., Mebonia, M., Piotrowski, K., Więckowski, J., Taliashvili, Z., Skhiladze, G., Nadaraia, L.
• Format: Article
• Language: English
• Subjects: Doping; electrical properties; Electrical resistivity; Electron emission; Electron transport; Geometry; Hall effect; Interference; Ion etching; Islands; Lithography; Magnetic fields; Nanostructure; nanostructures; Reactive ion etching; resistivity; Silicon; Thermoelectricity; Transport properties
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201700334

Recently, geometry‐induced quantum effects in periodic nanostructures were introduced and observed. Nanograting has been shown to dramatically improve thermoelectric and electron emission properties, and originate a geometry induced doping or G‐doping. Here, we concentrate on experimental investigation of G‐doping. We fabricate nanograting (NG) layers and measure their electron transport properties. The grating was fabricated on the surface of a silicon on insulator (SOI) wafer device layer using laser interference lithography followed by reactive ion etching. Next, large square islands were shaped in the device layer. The characteristics of NG and plain islands were compared to investigate G‐doping. Resistivity temperature dependences were recorded in the range of 4–300 K. For all 21 samples, the NG layers show a 2–3 order of magnitude reduction in resistivity with respect to the plain layer. Hall coefficient and thermopower measurements demonstrate that the NG layers are n‐type. Obtained G‐doping level corresponded to an “effective impurity” concentration of 1018 cm−3. The dependence of the resistivity and Hall coefficient on temperature and magnetic field were recorded in the ranges of 2–300 K and 0–3 T, respectively.