Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

We have investigated Si(111) surface morphology transformations during high-temperature sublimation and oxygen treatments by means of in situ ultrahigh vacuum reflection electron microscopy. By analyzing atomic steps kinetics and two-dimensional negative (vacancy) islands nucleation on ultra-flat Si...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2017-01, Vol.457, p.196-201
Main Authors: Sitnikov, S.V., Latyshev, A.V., Kosolobov, S.S.
Format: Article
Language:English
Subjects:
A1. Diffusion
A1. Mass transfer
A1. Surface processes
Adatoms
B2. Semiconducting silicon
Diffusion
Electron microscopes
Electron microscopy
High temperature
Islands
Kinetics
Lattice vacancies
Nuclear electric power generation
Nucleation
Oxygen
Reflection electron microscopy
Silicon
Sublimation
Surface diffusion
Terraces
Two dimensional analysis
Ultrahigh vacuum
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have investigated Si(111) surface morphology transformations during high-temperature sublimation and oxygen treatments by means of in situ ultrahigh vacuum reflection electron microscopy. By analyzing atomic steps kinetics and two-dimensional negative (vacancy) islands nucleation on ultra-flat Si(111) surface with extremely wide (up to 120μm in size) terraces we have estimated the activation energy associated with the surface-bulk vacancy exchange processes. We show that atomic steps motion and negative islands nucleation kinetics at temperatures above 1180°C can be described by the step-flow model of Burton, Cabrera and Frank taking into account advacancies formation. By comparing experimental results with predictions of model we conclude that the surface mass transport at temperatures above 1180°C is governed by surface vacancies nucleation and interaction with atomic steps rather than via adatoms surface diffusion. •Atomic steps kinetics at ultra-flat Si(111) surface is analyzed.•The terrace size at sublimation and oxygen etching is increased at T>1180°C.•The activation energy of surface-bulk vacancy exchange is estimated.•The BCF theory extended to advacancies describes the atomic steps motion at T>1180°C.•The surface mass-transport at high temperatures is governed by vacancies.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2016.05.048