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Impact of titanium ions in the hexagonal nanostructured ZnO thin films
ZnO thin films containing different ratios of Ti metal were prepared by the DC/RF sputtering technique. XPS analysis showed the presence of Ti content in the range from 0.9 to 1.5 at.%, and Ti was existed as Ti 4+ states. Zincite phase has been detected by XRD technique through all samples and the c...
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Published in: | Journal of materials science. Materials in electronics 2018-02, Vol.29 (4), p.3056-3065 |
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creator | Abdel-wahab, M. Sh Jilani, Asim Alshahrie, A. Hammad, Ahmed H. |
description | ZnO thin films containing different ratios of Ti metal were prepared by the DC/RF sputtering technique. XPS analysis showed the presence of Ti content in the range from 0.9 to 1.5 at.%, and Ti was existed as Ti
4+
states. Zincite phase has been detected by XRD technique through all samples and the crystallite size, the strain, and the dislocation density were estimated. Surface morphology and roughness were examined by atomic force microscopy. Optical absorbance and optical band gap were measured and determined. The optical band gap is proposed to be direct and varied from 3.25 to 3.282 eV as the Ti content increase. Photoluminescence properties show a highly intense peak at 412 nm related to the transition from shallow donor level to valence band comes from the interface traps through the grain boundaries. |
doi_str_mv | 10.1007/s10854-017-8237-z |
format | article |
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4+
states. Zincite phase has been detected by XRD technique through all samples and the crystallite size, the strain, and the dislocation density were estimated. Surface morphology and roughness were examined by atomic force microscopy. Optical absorbance and optical band gap were measured and determined. The optical band gap is proposed to be direct and varied from 3.25 to 3.282 eV as the Ti content increase. Photoluminescence properties show a highly intense peak at 412 nm related to the transition from shallow donor level to valence band comes from the interface traps through the grain boundaries.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-017-8237-z</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Atomic force microscopy ; Band gap ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Dislocation density ; Grain boundaries ; Materials Science ; Optical and Electronic Materials ; Photoluminescence ; Thin films ; Titanium ; Valence band ; X ray photoelectron spectroscopy ; Zinc oxide</subject><ispartof>Journal of materials science. Materials in electronics, 2018-02, Vol.29 (4), p.3056-3065</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2017</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2017). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-b7a7eaea27a4684286460fb1bb8347a141a30508aedc91f92472a932dd5e41273</citedby><cites>FETCH-LOGICAL-c316t-b7a7eaea27a4684286460fb1bb8347a141a30508aedc91f92472a932dd5e41273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Abdel-wahab, M. Sh</creatorcontrib><creatorcontrib>Jilani, Asim</creatorcontrib><creatorcontrib>Alshahrie, A.</creatorcontrib><creatorcontrib>Hammad, Ahmed H.</creatorcontrib><title>Impact of titanium ions in the hexagonal nanostructured ZnO thin films</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>ZnO thin films containing different ratios of Ti metal were prepared by the DC/RF sputtering technique. XPS analysis showed the presence of Ti content in the range from 0.9 to 1.5 at.%, and Ti was existed as Ti
4+
states. Zincite phase has been detected by XRD technique through all samples and the crystallite size, the strain, and the dislocation density were estimated. Surface morphology and roughness were examined by atomic force microscopy. Optical absorbance and optical band gap were measured and determined. The optical band gap is proposed to be direct and varied from 3.25 to 3.282 eV as the Ti content increase. Photoluminescence properties show a highly intense peak at 412 nm related to the transition from shallow donor level to valence band comes from the interface traps through the grain boundaries.</description><subject>Atomic force microscopy</subject><subject>Band gap</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Dislocation density</subject><subject>Grain boundaries</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Photoluminescence</subject><subject>Thin films</subject><subject>Titanium</subject><subject>Valence band</subject><subject>X ray photoelectron spectroscopy</subject><subject>Zinc oxide</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LwzAYh4MoOKcfwFvAczR_m_Qow-lgsIuCeAlv23TraNOZpKD79HbUgxdP7-V5frw8CN0yes8o1Q-RUaMkoUwTw4UmxzM0Y0oLIg1_P0czmitNpOL8El3FuKeUZlKYGVquugOUCfc1Tk0C3wwdbnofceNx2jm8c1-w7T202IPvYwpDmYbgKvzhNyMwUnXTdvEaXdTQRnfze-fobfn0ungh683zavG4JqVgWSKFBu3AAdcgMyO5yWRG64IVhRFSA5MMBFXUgKvKnNU5l5pDLnhVKScZ12KO7qbdQ-g_BxeT3fdDGN-LluWZUiwXOR0pNlFl6GMMrraH0HQQvi2j9pTLTrnsmMuectnj6PDJiSPrty78Wf5X-gEqLW0-</recordid><startdate>20180201</startdate><enddate>20180201</enddate><creator>Abdel-wahab, M. 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4+
states. Zincite phase has been detected by XRD technique through all samples and the crystallite size, the strain, and the dislocation density were estimated. Surface morphology and roughness were examined by atomic force microscopy. Optical absorbance and optical band gap were measured and determined. The optical band gap is proposed to be direct and varied from 3.25 to 3.282 eV as the Ti content increase. Photoluminescence properties show a highly intense peak at 412 nm related to the transition from shallow donor level to valence band comes from the interface traps through the grain boundaries.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-017-8237-z</doi><tpages>10</tpages></addata></record> |
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subjects | Atomic force microscopy Band gap Characterization and Evaluation of Materials Chemistry and Materials Science Dislocation density Grain boundaries Materials Science Optical and Electronic Materials Photoluminescence Thin films Titanium Valence band X ray photoelectron spectroscopy Zinc oxide |
title | Impact of titanium ions in the hexagonal nanostructured ZnO thin films |
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