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Achieving high efficiency by high temperature annealing of hole transporting polymer layer in solution-processed organic light-emitting devices

•We developed highly efficient solution-processed OLEDs.•Poly-TPD was used as hole transporting polymer layer.•Annealing of poly-TPD at about glass transition temperature was critical.•Maximum current efficiency of 61.5cd/A was achieved.•Maximum external quantum efficiency of 17.5% was achieved. We...

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Bibliographic Details
Published in:Synthetic metals 2017-10, Vol.232, p.167-170
Main Authors: Kim, Tae-Yong, Jung, Jae-Hoon, Kim, Jong-Beom, Moon, Dae-Gyu
Format: Article
Language:English
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Summary:•We developed highly efficient solution-processed OLEDs.•Poly-TPD was used as hole transporting polymer layer.•Annealing of poly-TPD at about glass transition temperature was critical.•Maximum current efficiency of 61.5cd/A was achieved.•Maximum external quantum efficiency of 17.5% was achieved. We developed highly efficient solution-processed phosphorescent organic light-emitting device by annealing of hole transporting polymer layer at about glass transition temperature. Poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD) was used as a hole transporting polymer layer and tris(2-phenylpyridine)iridium(III) [Ir(ppy)3] doped N,N'-dicarbazolyl-3,5-benzene (mCP) was used as a solution-processed emission layer. The annealing temperature was critical to the well-defined interface between the poly-TPD and mCP:Ir(ppy)3 layers. In addition, the carrier recombination was significantly enhanced by high temperature annealing of poly-TPD layer. A current efficiency of 61.5cd/A and an external quantum efficiency of 17.5% were achieved by annealing of poly-TPD layer at about glass transition temperature.
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2017.08.004