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Achieving high efficiency by high temperature annealing of hole transporting polymer layer in solution-processed organic light-emitting devices
•We developed highly efficient solution-processed OLEDs.•Poly-TPD was used as hole transporting polymer layer.•Annealing of poly-TPD at about glass transition temperature was critical.•Maximum current efficiency of 61.5cd/A was achieved.•Maximum external quantum efficiency of 17.5% was achieved. We...
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Published in: | Synthetic metals 2017-10, Vol.232, p.167-170 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •We developed highly efficient solution-processed OLEDs.•Poly-TPD was used as hole transporting polymer layer.•Annealing of poly-TPD at about glass transition temperature was critical.•Maximum current efficiency of 61.5cd/A was achieved.•Maximum external quantum efficiency of 17.5% was achieved.
We developed highly efficient solution-processed phosphorescent organic light-emitting device by annealing of hole transporting polymer layer at about glass transition temperature. Poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD) was used as a hole transporting polymer layer and tris(2-phenylpyridine)iridium(III) [Ir(ppy)3] doped N,N'-dicarbazolyl-3,5-benzene (mCP) was used as a solution-processed emission layer. The annealing temperature was critical to the well-defined interface between the poly-TPD and mCP:Ir(ppy)3 layers. In addition, the carrier recombination was significantly enhanced by high temperature annealing of poly-TPD layer. A current efficiency of 61.5cd/A and an external quantum efficiency of 17.5% were achieved by annealing of poly-TPD layer at about glass transition temperature. |
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ISSN: | 0379-6779 1879-3290 |
DOI: | 10.1016/j.synthmet.2017.08.004 |