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InAs nanowire superconducting tunnel junctions: Quasiparticle spectroscopy, thermometry, and nanorefrigeration

We demonstrate an original method based on controlled oxidation for creating high-quality tunnel junctions between superconducting A1 reservoirs and InAs semiconductor nanowires (NWs). We show clean tunnel characteristics with a current suppression by 〉4 orders of magnitude for a junction bias well...

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Bibliographic Details
Published in:Nano research 2017-10, Vol.10 (10), p.3468-3475
Main Authors: Mastomäki, Jaakko, Roddaro, Stefano, Rocci, Mirko, Zannier, Valentina, Ercolani, Daniele, Sorba, Lucia, Maasilta, Ilari J., Ligato, Nadia, Fornieri, Antonio, Strambini, Elia, Giazotto, Francesco
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Language:English
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Summary:We demonstrate an original method based on controlled oxidation for creating high-quality tunnel junctions between superconducting A1 reservoirs and InAs semiconductor nanowires (NWs). We show clean tunnel characteristics with a current suppression by 〉4 orders of magnitude for a junction bias well below the A1 gap of △0≈ 200 μeV. The experimental data agree well with the Bardeen- Cooper-Schrieffer theoretical expectations for a superconducting tunnel junction. The studied devices employ small-scale tunnel contacts functioning as thermometers as well as larger electrodes that provide proof-of-principle active cooling of the electron distribution in the NWs. A peak refrigeration of approximately δT = 10 mK is achieved at a bath temperature of Tbath≈ 250-350 mK for our prototype devices. This method introduces important perspectives for the investigation of the thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-017-1558-7