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Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia
Aluminum nitride (AlN x ) films were obtained by atomic layer deposition (ALD) using tris(diethylamido) aluminum(III) (TDEAA) and hydrazine (N 2 H 4 ) or ammonia (NH 3 ). The quartz crystal microbalance (QCM) data showed that the surface reactions of TDEAA and N2H4 (or NH 3 ) at temperatures from 15...
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| Published in: | Russian microelectronics 2018-03, Vol.47 (2), p.118-130 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| container_end_page | 130 |
| container_issue | 2 |
| container_start_page | 118 |
| container_title | Russian microelectronics |
| container_volume | 47 |
| creator | Abdulagatov, A. I. Ramazanov, Sh. M. Dallaev, R. S. Murliev, E. K. Palchaev, D. K. Rabadanov, M. Kh Abdulagatov, I. M. |
| description | Aluminum nitride (AlN
x
) films were obtained by atomic layer deposition (ALD) using tris(diethylamido) aluminum(III) (TDEAA) and hydrazine (N
2
H
4
) or ammonia (NH
3
). The quartz crystal microbalance (QCM) data showed that the surface reactions of TDEAA and N2H4 (or NH
3
) at temperatures from 150 to 225°C were self-limiting. The rates of deposition of the nitride film at 200°C for systems with N
2
H
4
and NH
3
coincided: ~1.1 Å/cycle. The ALD AlN films obtained at 200°C using hydrazine had higher density (2.36 g/cm
3
, 72.4% of bulk density) than those obtained with ammonia (2.22 g/cm
3
, 68%). The elemental analysis of the film deposited using TDEAA/N2H4 at 200°C showed the presence of carbon (~1.4 at %), oxygen (~3.2 at %), and hydrogen (22.6 at %) impurities. The N/Al atomic concentration ratio was ~1.3. The residual impurity content in the case of N
2
H
4
was lower than for NH
3
. In general, it was confirmed that hydrazine has a more preferable surface thermochemistry than ammonia. |
| doi_str_mv | 10.1134/S1063739718020026 |
| format | article |
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x
) films were obtained by atomic layer deposition (ALD) using tris(diethylamido) aluminum(III) (TDEAA) and hydrazine (N
2
H
4
) or ammonia (NH
3
). The quartz crystal microbalance (QCM) data showed that the surface reactions of TDEAA and N2H4 (or NH
3
) at temperatures from 150 to 225°C were self-limiting. The rates of deposition of the nitride film at 200°C for systems with N
2
H
4
and NH
3
coincided: ~1.1 Å/cycle. The ALD AlN films obtained at 200°C using hydrazine had higher density (2.36 g/cm
3
, 72.4% of bulk density) than those obtained with ammonia (2.22 g/cm
3
, 68%). The elemental analysis of the film deposited using TDEAA/N2H4 at 200°C showed the presence of carbon (~1.4 at %), oxygen (~3.2 at %), and hydrogen (22.6 at %) impurities. The N/Al atomic concentration ratio was ~1.3. The residual impurity content in the case of N
2
H
4
was lower than for NH
3
. In general, it was confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.</description><identifier>ISSN: 1063-7397</identifier><identifier>EISSN: 1608-3415</identifier><identifier>DOI: 10.1134/S1063739718020026</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminum ; Aluminum nitride ; Ammonia ; Atomic layer epitaxy ; Bulk density ; Electrical Engineering ; Engineering ; Impurities ; Surface reactions ; Thermochemistry</subject><ispartof>Russian microelectronics, 2018-03, Vol.47 (2), p.118-130</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2976-4bd2b8e46705ad0e333aa76fb41db2e6e5e3a60100d361e11631cdba5e9acfa23</citedby><cites>FETCH-LOGICAL-c2976-4bd2b8e46705ad0e333aa76fb41db2e6e5e3a60100d361e11631cdba5e9acfa23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Abdulagatov, A. I.</creatorcontrib><creatorcontrib>Ramazanov, Sh. M.</creatorcontrib><creatorcontrib>Dallaev, R. S.</creatorcontrib><creatorcontrib>Murliev, E. K.</creatorcontrib><creatorcontrib>Palchaev, D. K.</creatorcontrib><creatorcontrib>Rabadanov, M. Kh</creatorcontrib><creatorcontrib>Abdulagatov, I. M.</creatorcontrib><title>Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia</title><title>Russian microelectronics</title><addtitle>Russ Microelectron</addtitle><description>Aluminum nitride (AlN
x
) films were obtained by atomic layer deposition (ALD) using tris(diethylamido) aluminum(III) (TDEAA) and hydrazine (N
2
H
4
) or ammonia (NH
3
). The quartz crystal microbalance (QCM) data showed that the surface reactions of TDEAA and N2H4 (or NH
3
) at temperatures from 150 to 225°C were self-limiting. The rates of deposition of the nitride film at 200°C for systems with N
2
H
4
and NH
3
coincided: ~1.1 Å/cycle. The ALD AlN films obtained at 200°C using hydrazine had higher density (2.36 g/cm
3
, 72.4% of bulk density) than those obtained with ammonia (2.22 g/cm
3
, 68%). The elemental analysis of the film deposited using TDEAA/N2H4 at 200°C showed the presence of carbon (~1.4 at %), oxygen (~3.2 at %), and hydrogen (22.6 at %) impurities. The N/Al atomic concentration ratio was ~1.3. The residual impurity content in the case of N
2
H
4
was lower than for NH
3
. In general, it was confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.</description><subject>Aluminum</subject><subject>Aluminum nitride</subject><subject>Ammonia</subject><subject>Atomic layer epitaxy</subject><subject>Bulk density</subject><subject>Electrical Engineering</subject><subject>Engineering</subject><subject>Impurities</subject><subject>Surface reactions</subject><subject>Thermochemistry</subject><issn>1063-7397</issn><issn>1608-3415</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kD9PwzAQxS0EEqXwAdgsscAQ8NmJk4xR-VOkCgbaOXLiS3HV2MVOhvDpSVUQA2K6k97vvTs9Qi6B3QKI-O4NmBSpyFPIGGeMyyMyAcmySMSQHI_7KEd7_ZSchbBhDBiTckKw6FxrarpQA3p6jzsXTGecpa6hxbZvje1b-mI6bzTSVTB2TZfehGttsHsftqo12t2oH1BZTeeD9urTWKTO06JtnTXqnJw0ahvw4ntOyerxYTmbR4vXp-dZsYhqnqcyiivNqwxjmbJEaYZCCKVS2VQx6IqjxASFkvvXtZCAAFJArSuVYK7qRnExJVeH3J13Hz2Grty43tvxZMkZh1hkkMNIwYGqvQvBY1PuvGmVH0pg5b7N8k-bo4cfPGFk7Rr9b_L_pi8BKXcP</recordid><startdate>20180301</startdate><enddate>20180301</enddate><creator>Abdulagatov, A. I.</creator><creator>Ramazanov, Sh. M.</creator><creator>Dallaev, R. S.</creator><creator>Murliev, E. K.</creator><creator>Palchaev, D. K.</creator><creator>Rabadanov, M. Kh</creator><creator>Abdulagatov, I. M.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20180301</creationdate><title>Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia</title><author>Abdulagatov, A. I. ; Ramazanov, Sh. M. ; Dallaev, R. S. ; Murliev, E. K. ; Palchaev, D. K. ; Rabadanov, M. Kh ; Abdulagatov, I. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2976-4bd2b8e46705ad0e333aa76fb41db2e6e5e3a60100d361e11631cdba5e9acfa23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Aluminum</topic><topic>Aluminum nitride</topic><topic>Ammonia</topic><topic>Atomic layer epitaxy</topic><topic>Bulk density</topic><topic>Electrical Engineering</topic><topic>Engineering</topic><topic>Impurities</topic><topic>Surface reactions</topic><topic>Thermochemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Abdulagatov, A. I.</creatorcontrib><creatorcontrib>Ramazanov, Sh. M.</creatorcontrib><creatorcontrib>Dallaev, R. S.</creatorcontrib><creatorcontrib>Murliev, E. K.</creatorcontrib><creatorcontrib>Palchaev, D. K.</creatorcontrib><creatorcontrib>Rabadanov, M. Kh</creatorcontrib><creatorcontrib>Abdulagatov, I. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Russian microelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abdulagatov, A. I.</au><au>Ramazanov, Sh. M.</au><au>Dallaev, R. S.</au><au>Murliev, E. K.</au><au>Palchaev, D. K.</au><au>Rabadanov, M. Kh</au><au>Abdulagatov, I. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia</atitle><jtitle>Russian microelectronics</jtitle><stitle>Russ Microelectron</stitle><date>2018-03-01</date><risdate>2018</risdate><volume>47</volume><issue>2</issue><spage>118</spage><epage>130</epage><pages>118-130</pages><issn>1063-7397</issn><eissn>1608-3415</eissn><abstract>Aluminum nitride (AlN
x
) films were obtained by atomic layer deposition (ALD) using tris(diethylamido) aluminum(III) (TDEAA) and hydrazine (N
2
H
4
) or ammonia (NH
3
). The quartz crystal microbalance (QCM) data showed that the surface reactions of TDEAA and N2H4 (or NH
3
) at temperatures from 150 to 225°C were self-limiting. The rates of deposition of the nitride film at 200°C for systems with N
2
H
4
and NH
3
coincided: ~1.1 Å/cycle. The ALD AlN films obtained at 200°C using hydrazine had higher density (2.36 g/cm
3
, 72.4% of bulk density) than those obtained with ammonia (2.22 g/cm
3
, 68%). The elemental analysis of the film deposited using TDEAA/N2H4 at 200°C showed the presence of carbon (~1.4 at %), oxygen (~3.2 at %), and hydrogen (22.6 at %) impurities. The N/Al atomic concentration ratio was ~1.3. The residual impurity content in the case of N
2
H
4
was lower than for NH
3
. In general, it was confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063739718020026</doi><tpages>13</tpages></addata></record> |
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| ispartof | Russian microelectronics, 2018-03, Vol.47 (2), p.118-130 |
| issn | 1063-7397 1608-3415 |
| language | eng |
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| source | Springer Link |
| subjects | Aluminum Aluminum nitride Ammonia Atomic layer epitaxy Bulk density Electrical Engineering Engineering Impurities Surface reactions Thermochemistry |
| title | Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia |
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