Effect of ammonia plasma treatment on the luminescence and stability of porous silicon

•A novel plasma treatment in ammonia atmosphere for attaining stable porous silicon has been proposed.•Comparison between low and high RF power by means of structural and optical experiments has been studied.•No recuperation in the visible photoluminescence at high power remarks the stability of the...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2018-04, Vol.216, p.277-280
Main Authors: Pérez, M., Dutt, A., de la Mora, B., Mon-Pérez, E, Villagrán-Muniz, M., García-Sánchez, M.F., Santana, G.
Format: Article
Language:English
Subjects:
Ammonia
Chemical vapor deposition
Fourier transforms
Infrared analysis
Luminescence
Materials science
Nanocrystalline materials
Nitrogen
Optical materials and properties
Optical properties
Optoelectronics
Photoluminescence
Porous materials
Porous silicon
Recovery
Scanning electron microscopy
Semiconductors
Silicon
Stability
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•A novel plasma treatment in ammonia atmosphere for attaining stable porous silicon has been proposed.•Comparison between low and high RF power by means of structural and optical experiments has been studied.•No recuperation in the visible photoluminescence at high power remarks the stability of the material. Effect of ammonia plasma on the luminescence and stability of the porous silicon (PS) has been studied. Samples were cut into different parts to compare the as-deposited sample with the low (5 W) and high RF power (75 W) treated parts. Scanning electron microscopy (SEM) shown that the samples treated at 5 W did not demonstrate a change in the structural aspects, whereas, samples treated at 75 W shown some modifications in the final structure. Photoluminescence (PL) spectroscopy revealed strong diminishment in the luminescence as an outcome of plasma treatment for both samples. In comparison to sample treated at 5 W, high RF power treated sample did not show recovery in the PL with the course of time. Fourier transform infrared (FTIR) analysis shown the alterations in the hydrogen and oxygen bonding with time for the sample treated at 5 W. On the other hand, the appearance of stable nitrogen peaks (Si-N, N-H) were found for the other sample. PL quenching could be due to the appearance of plasma-induced defects and/or hydrogen-related dangling bonds and further shown the stability of the sample treated at 75 W (no recovery in PL) for optoelectronic applications.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2018.01.113