Synapse‐Like Organic Thin Film Memristors

Exploring new type of synapse–like electronic devices with fusion of computing and memory is a promising strategy to fundamentally approach to intelligent machines. Herein, organic thin film memristors (OTFMs) are achieved, functioning as electrically programmable and erasable analog memory with con...

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Bibliographic Details
Published in:Advanced functional materials 2018-05, Vol.28 (22), p.n/a
Main Authors: Zhong, Ya‐Nan, Wang, Tian, Gao, Xu, Xu, Jian‐Long, Wang, Sui‐Dong
Format: Article
Language:English
Subjects:
analog memory
Computer memory
Current modulation
Electronic devices
Materials science
Memristors
organic thin films
Plastic properties
Synapses
Thin films
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Summary:Exploring new type of synapse–like electronic devices with fusion of computing and memory is a promising strategy to fundamentally approach to intelligent machines. Herein, organic thin film memristors (OTFMs) are achieved, functioning as electrically programmable and erasable analog memory with continuous and nonvolatile device states. The memristive characteristics of OTFMs stem from the asymmetric electrode configuration and the cumulative charge trapping/detrapping in a polymer electret layer, which enables the state–dependent current modulation analogous to the synaptic weight change in biological synapses. OTFMs are demonstrated to successfully emulate the essential synaptic functions, including the reversible potentiation and depression, and the short‐term plasticity such as the paired‐pulse facilitation and the long‐term plasticity such as the spike–timing dependent plasticity. Organic thin film memristors are achieved based on asymmetric electrode configuration and cumulative charge trapping/detrapping in a polymer electret layer, which function as electrically editable and preservable analog memory. Organic thin film memristors are demonstrated to be capable of emulating both short‐term and long‐term synaptic plasticity, such as the paired‐pulse facilitation and spike‐timing‐dependent plasticity.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201800854