Electric-field assisted spin torque nano-oscillator and binary frequency shift keying modulation

•A BFSK modulation scheme is presented by using a spin-torque oscillator with co-action of electric field and current pulses.•The shift of precession frequency shows fascinating performance without any transient state.•The dynamical phase diagram is analytically predicted through a novel coordinate...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2018-04, Vol.452, p.458-463
Main Authors: Zhang, Xiangli, Chen, Hao-Hsuan, Zhang, Zongzhi, Liu, Yaowen
Format: Article
Language:English
Subjects:
Coordinate transformations
Electric fields
Frequency shift keying
Magnetism
Magnetization
Microwave emission
Modulation
Oscillators
Precession
Rotation
Stationary processes
Torque
Tunnel junctions
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Summary:•A BFSK modulation scheme is presented by using a spin-torque oscillator with co-action of electric field and current pulses.•The shift of precession frequency shows fascinating performance without any transient state.•The dynamical phase diagram is analytically predicted through a novel coordinate transformation. Electric-controlled magnetization precession introduces technologically relevant possibility for developing spin torque nano-oscillators (STNO) with potential applications in microwave emission. Using the perpendicularly magnetized magnetic tunnel junction (MTJ), we show that the magnetization oscillation frequency can be tuned by the co-action of electric field and spin polarized current. The dynamical phase diagram of MTJ-based STNO is analytically predicted through coordinate transformation from the laboratory frame to the rotation frame, by which the nonstationary out-of-plane magnetization precession process is therefore transformed into the stationary process in the rotation frame. Furthermore, using this STNO as a microwave source, we numerically demonstrate that the bit signal can be transmitted by a binary frequency shift keying (BFSK) modulation technique. The BFSK scheme shows good modulation features with no transient state.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2017.12.063