Observation of Collective Coulomb Blockade in a Gate-controlled Linear Quantum-dot Array

• Published in: arXiv.org 2016-03
• Main Authors: Wen-Yao, Wei, Tung-Sheng Lo, Chiu-Chun, Tang, Kuan-Ting, Lin, Brink, Markus, Dah-Chin, Ling, Cheng-Chung, Chi, Chung-Yu, Mou, Jeng-Chung, Chen, Newns, Dennis M, Tsuei, Chang C
• Format: Article
• Language: English
• Subjects: Arrays; Collapse; Coupling (molecular); Insulators; Metal-insulator transition; Quantum dots; Quantum transport; Qubits (quantum computing); Resistance; Substrates
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.1603.04625

The quantum transport of electrons in an artificial atom, such as a quantum dot (QD), is governed by the Coulomb blockade (CB) effects, revealing the ground-state charge configuration of the electronic system under interplays of the on-site strong Coulomb interactions. In a coherently-coupled QD array, i.e. artificial molecules, the phenomenon of collective CB (CCB) was predicted by theoretical studies circa two decades ago but its evidence remains controversial. Here, we present direct evidence for the observation of CCB in a six-quantum-dot array (QDA) under high magnetic fields at 20 mK. The coherent inter-dot coupling is enhanced and mediated via the Quantum Hall edge states of the GaAs sample substrate. Two continuously fine-tuned gate voltages enable the quantum dot conductance spectrum to undergo a localization to delocalization transition process which manifests as an emergence and a collapse of CCB. The transition between these two distinct quantum phases is analogous to the Mott-Hubbard metal-insulator transition. The gate-voltage-dependent conductance map thus obtained makes it possible to utilize QDA as an on-chip laboratory for studying CCB and Mott physics. Our QDA device provides a platform for developing engineered QD materials, qubit systems and artificial molecular devices in the future.