Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals

Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The...

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Bibliographic Details
Published in:arXiv.org 2013-07
Main Authors: Sushko, G B, Korol, A V, Greiner, Walter, Solov'yov, A V
Format: Article
Language:English
Subjects:
Channeling
Computer simulation
Crystallography
Crystals
Electrons
Emission spectra
Projectiles
Silicon
Online Access:Get full text
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Description
Summary:Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195--855 MeV.
ISSN:2331-8422
DOI:10.48550/arxiv.1307.6787