Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping

Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by mole...

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Bibliographic Details
Published in:arXiv.org 2008-07
Main Authors: Liu, Li, Ryu, Sunmin, Tomasik, Michelle R, Stolyarova, Elena, Jung, Naeyoung, Hybertsen, Mark S, Steigerwald, Michael L, Brus, Louis E, Flynn, George W
Format: Article
Language:English
Subjects:
Basal plane
Chemical attack
Environmental effects
Etch pits
Etching
Gas flow
Graphene
Graphite
Nucleation
Organic chemistry
Oxidation
Oxygen
Point defects
Reaction kinetics
Two dimensional materials
Ultraviolet radiation
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Summary:Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by molecular oxygen with aromatic molecules. We find that O2 etching kinetics vary strongly with the number of graphene layers in the sample. Three-layer-thick samples show etching similar to bulk natural graphite. Single-layer graphene reacts faster and shows random etch pits in contrast to natural graphite where nucleation occurs at point defects. In addition, basal plane oxygen species strongly hole dope graphene, with a Fermi level shift of ~0.5 eV. These oxygen species partially desorb in an Ar gas flow, or under irradiation by far UV light, and readsorb again in an O2 atmosphere at room temperature. This strongly doped graphene is very different than graphene oxide made by mineral acid attack.
ISSN:2331-8422
DOI:10.48550/arxiv.0807.0261