Complementary metal-SU8-graphene method for making integrated graphene nanocircuits

This work reports a complementary metal-SU8-graphene (MSG) method for constructing integrated graphene nanocircuits with excellent air and temperature stability. In this approach, electron beam (e-beam) lithography was first used to selectively pattern micro/nanoscale meshes on pristine graphene to...

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Bibliographic Details
Published in:Micro & nano letters 2018-04, Vol.13 (4), p.465-468
Main Authors: Al-Mumen, Haider, Li, Wen
Format: Article
Language:English
Subjects:
air stability
complementary metal‐SU8‐graphene method
Doping
doping source
Electron beam lithography
electronic characteristics
elemental semiconductors
encapsulating layer
Field effect transistors
Graphene
graphene devices
integrated circuit design
integrated graphene nanocircuits
invertors
microscale meshes
nanopatterning
nanoscale meshes
n‐type graphene
polymer films
p‐type graphene
Semiconductor devices
semiconductor doping
single graphene sheet
SU‐8 thin films
temperature stability
thermal characteristics
Thin films
voltage inverter
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Summary:This work reports a complementary metal-SU8-graphene (MSG) method for constructing integrated graphene nanocircuits with excellent air and temperature stability. In this approach, electron beam (e-beam) lithography was first used to selectively pattern micro/nanoscale meshes on pristine graphene to form p-type regions. Then SU-8 thin films were spun and e-beam patterned to convert the target region of p-type graphene into n-type. The SU-8 was utilised as a doping source and an encapsulating layer for n-type graphene. To demonstrate the proposed MSG method, a graphene-based voltage inverter is constructed by complementary doping p- and n-type field effect transistors on a single graphene sheet. The electronic and thermal characteristics of the fabricated device were also studied.
ISSN:1750-0443
1750-0443
DOI:10.1049/mnl.2017.0508