Material Limit of Power Devices-Applied to Asymmetric 2-D Superjunction MOSFET

In spite of the reporting of several mathematical approaches dealing with the behavior of the superjunction MOSFET's specific resistance, a study for the asymmetrical pillar (when the width of the n-pillar and the p-pillar are not the same at a given cellpitch) has not been carried out yet. Whe...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2018-08, Vol.65 (8), p.3326-3332
Main Authors: Kang, H., Udrea, F.
Format: Article
Language:English
Subjects:
Asymmetry
Doping
Electronic devices
JFET
JFETs
Mathematical model
MOSFET
MOSFETs
power MOSFET
Resistance
Semiconductor device modeling
superjunction
Technological innovation
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Summary:In spite of the reporting of several mathematical approaches dealing with the behavior of the superjunction MOSFET's specific resistance, a study for the asymmetrical pillar (when the width of the n-pillar and the p-pillar are not the same at a given cellpitch) has not been carried out yet. When the width of one of the pillar (say n-pillar) is modified, the doping concentration (say donor) should be changed to maintain a charge balance condition. This in turn, changes the width of the depletion region, due to the parasitic JFET effect and as a result the effective on-state conduction path. This raises the question whether the best tradeoff between the specific on-state resistance and the breakdown voltage could be achieved by employing the conventional assumption of the same width of the n and p pillars. This paper clarifies the best option for the width of each pillar when designing a superjunction MOSFET and adapts the figures of merit to take into account the asymmetrical superjunction cell.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2839180