Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect...

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Bibliographic Details
Published in:Applied physics letters 2016-07, Vol.109 (3)
Main Authors: Palacios-Huerta, L., Cabañas-Tay, S. A., Cardona-Castro, M. A., Aceves-Mijares, M., Domínguez-Horna, C., Morales-Sánchez, A.
Format: Article
Language:English
Subjects:
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPARATIVE EVALUATIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEFECTS
ELECTROLUMINESCENCE
ION IMPLANTATION
LAYERS
Multilayers
NANOSTRUCTURES
OPTICAL PROPERTIES
OPTOELECTRONIC DEVICES
Oxide coatings
OXYGEN
PHOTOLUMINESCENCE
SILICON
SILICON IONS
STOICHIOMETRY
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si+ implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4959080