Electronic properties of one-dimensional nanostructures of the Bi2Se3 topological insulator

• Published in: Physical review. B 2018-04, Vol.97 (16)
• Main Authors: Virk, Naunidh, Autès, Gabriel, Yazyev, Oleg V
• Format: Article
• Language: English
• Subjects: Circumferences; Current carriers; Dependence; Electron spin; Electronic properties; Electronic structure; Momentum; Nanostructure; Nanowires; Polarization (spin alignment); Spintronics
• ISSN: 2469-9950; 2469-9969
• DOI: 10.1103/PhysRevB.97.165411

We theoretically study the electronic structure and spin properties of one-dimensional nanostructures of the prototypical bulk topological insulator Bi2Se3. Realistic models of experimentally observed Bi2Se3 nanowires and nanoribbons are considered using the tight-binding method. At low energies, the band structures are composed of a series of evenly spaced degenerate subbands resulting from circumferential confinement of the topological surface states. The direct band gaps due to the nontrivial π Berry phase show a clear dependence on the circumference. The spin-momentum locking of the topological surface states results in a pronounced 2π spin rotation around the circumference with the degree of spin polarization dependent on the momentum along the nanostructure. Overall, the band structures and spin textures are more complicated for nanoribbons, which expose two distinct facets. The effects of reduced dimensionality are rationalized with the help of a simple model that considers circumferential quantization of the topological surface states. Furthermore, the surface spin density induced by an electric current along the nanostructure shows a pronounced oscillatory dependence on the charge-carrier energy, which can be exploited in spintronics applications.