Electrical and photovoltaic characteristics of MoS2/Si p-n junctions

Bulk-like molybdenum disulfide (MoS2) thin films were deposited on the surface of p-type Si substrates using dc magnetron sputtering technique and MoS2/Si p-n junctions were formed. The vibrating modes of E12g and A1g were observed from the Raman spectrum of the MoS2 films. The current density versu...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2015-03, Vol.117 (11)
Main Authors: Hao, Lanzhong, Liu, Yunjie, Gao, Wei, Han, Zhide, Xue, Qingzhong, Zeng, Huizhong, Wu, Zhipeng, Zhu, Jun, Zhang, Wanli
Format: Article
Language:English
Subjects:
Applied physics
Circuits
Current density
Electrical junctions
Energy conversion efficiency
Energy gap
Energy levels
Light
Magnetron sputtering
Molybdenum disulfide
Open circuit voltage
P-n junctions
Photovoltaic cells
Short circuit currents
Silicon substrates
Solar cells
Thin films
Ultraviolet spectra
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Bulk-like molybdenum disulfide (MoS2) thin films were deposited on the surface of p-type Si substrates using dc magnetron sputtering technique and MoS2/Si p-n junctions were formed. The vibrating modes of E12g and A1g were observed from the Raman spectrum of the MoS2 films. The current density versus voltage (J-V) characteristics of the junction were investigated. A typical J-V rectifying effect with a turn-on voltage of 0.2 V was shown. In different voltage range, the electrical transporting of the junction was dominated by diffusion current and recombination current, respectively. Under the light illumination of 15 mW cm−2, the p-n junction exhibited obvious photovoltaic characteristics with a short-circuit current density of 3.2 mA cm−2 and open-circuit voltage of 0.14 V. The fill factor and energy conversion efficiency were 42.4% and 1.3%, respectively. According to the determination of the Fermi-energy level (∼4.65 eV) and energy-band gap (∼1.45 eV) of the MoS2 films by capacitance-voltage curve and ultraviolet-visible transmission spectra, the mechanisms of the electrical and photovoltaic characteristics were discussed in terms of the energy-band structure of the MoS2/Si p-n junctions. The results hold the promise for the integration of MoS2 thin films with commercially available Si-based electronics in high-efficient photovoltaic devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4915951