Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior

We present a detailed TCAD analysis of the impact of length scaling and the associated short-channel effects in the subthreshold regime of the two classes of double-gate negative capacitance transistors (NCFETs): metal-ferroelectric-metal-insulator-semiconductor (MFMIS) and metal-ferroelectric-insul...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2018-11, Vol.65 (11), p.5130-5136
Main Authors: Pahwa, Girish, Agarwal, Amit, Chauhan, Yogesh Singh
Format: Article
Language:English
Subjects:
Capacitance
Doping
Electric potential
Ferroelectric
Ferroelectric materials
Ferroelectricity
Field effect transistors
Impact analysis
Logic gates
Metals
metal–ferroelectric–insulator–semiconductor (MFIS)
metal–ferroelectric–metal–insulator–semiconductor (MFMIS)
MIS (semiconductors)
negative capacitance
negative capacitance transistor (NCFET)
Scaling
Semiconductor devices
short-channel effects
Silicon
TCAD
Threshold voltage
Transistors
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