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Size-tunable strain engineering in Ge nanocrystals embedded within SiO2 and Si3N4
We report a unique ability to control the sign and size of the stress within Ge nanocrystals or nanodots fabricated using a complementary metal-oxide-semiconductor-compatible process within SiO2 and Si3N4 layers. Very large (as much as 4.5%), size-dependent compressive and tensile strains can be gen...
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Published in: | Applied physics letters 2014-10, Vol.105 (17) |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report a unique ability to control the sign and size of the stress within Ge nanocrystals or nanodots fabricated using a complementary metal-oxide-semiconductor-compatible process within SiO2 and Si3N4 layers. Very large (as much as 4.5%), size-dependent compressive and tensile strains can be generated depending on whether the dot is embedded within either a Si3N4 or a SiO2 layer. Raman measurements reveal significant anharmonicity for smaller Ge dots and possible distortions of the diamond cubic lattice as evidenced by the measured GrĂ¼nesien parameters and confirmed by their transmission electron diffraction patterns. Two completely different mechanisms are proposed to explain the formation of the tensile and compressive strain states, respectively. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4900942 |