Engineering of silicon/HfO2 interface by variable energy proton irradiation

• Published in: Applied physics letters 2014-08, Vol.105 (7)
• Main Authors: Maurya, Savita, Tribedi, L. C., Maringanti, Radhakrishna
• Format: Article
• Language: English
• Subjects: Annealing; Applied physics; Chemical reactions; Field effect transistors; Hafnium oxide; Maintenance; Organic chemistry; Proton irradiation; Semiconductor devices; Silicon substrates
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4893731

Surfaces and interfaces between materials are of paramount importance for various phenomena, such as painting a house, catalyst driven chemical reactions, intricate life processes, corrosion of materials, and fabrication of various semiconductor devices. Interface of silicon or other such substrates with any of the oxides has profound effect on the performance of metal oxide field effect transistors and other similar devices. Since a surface is an abrupt termination of a periodic crystal, surface atoms will have some unsaturated valence electrons and these unsaturated bonds at the semiconductor surface make it chemically highly reactive. Other than annealing, there is not much that can be done to manage these unsaturated bonds. This study was initiated to explore the possibility of repairing these unsaturated dangling bonds that are formed at the silicon and oxide interface during the deposition of oxide layer above silicon, by the use of proton irradiation. In order to improve the interface characteristics, we present a method to modify the interface of silicon and hafnium dioxide after its fabrication, through proton irradiation. Results of the study are promising and probably this method might be used along with other methods such as annealing to modify the interface, after its fabrication.