High‐Temperature‐Triggered Thermally Degradable Electronics Based on Flexible Silicon Nanomembranes

• Published in: Advanced functional materials 2018-11, Vol.28 (45), p.n/a
• Main Authors: Li, Gongjin, Song, Enming, Huang, Gaoshan, Guo, Qinglei, Ma, Fei, Zhou, Bin, Mei, Yongfeng
• Format: Article
• Language: English
• Subjects: Cybersecurity; Degradation; Electronic devices; Electronic systems; Electronics; Failure mechanisms; high‐temperature‐triggered degradation; Interlayers; Materials science; poly‐α‐methylstyrene; Silicon; silicon nanomembranes; transient electronics
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.201801448

An advanced transient approach enables the sudden degradation and subsequent disappearance of device‐grade electronic systems on a temporary platform with limited remains over a desired period for long‐term stable operation. To satisfy the requirements for flexible devices in transient electronics capable of working at high temperature, transient Si‐nanomembrane (Si‐NM) electronics integrated with high‐temperature degradable poly‐α‐methylstyrene (PAMS) are presented. Systematic experimental studies suggest that a 4 µm thick PAMS interlayer in the Si‐NM device ensures stable operation below the decomposition temperature of PAMS (≈300 °C), while the device undergoes transient process when triggered at higher temperature. Experimental characterization and theoretical modeling reveal the essential properties of the flexible device and its failure mechanism. Demonstrations of such a transient component in high‐temperature electronics highlight the potential advantages in the demands for circuit safeguards, information security, and sensing/control systems. The integration of a high‐temperature degradable poly‐α‐methylstyrene interlayer enables a distinct and irreversible degradation process for flexible single crystal silicon nanomembrane devices at 300 °C. Systematic experiments and simulations reveal the failure mechanism. This work provides a foundation for understanding the transient mode of future on‐chip components in high‐temperature electronics.