Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy

The structural transition of a graphene buffer layer epitaxially grown on 6H silicon carbide (SiC) to quasifreestanding monolayer graphene by intercalation of oxygen and water molecules at low concentrations is studied by temperature-dependent Raman spectroscopy. We present a detailed investigation...

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Bibliographic Details
Published in:Physical review. B 2019-01, Vol.99 (4), p.045443, Article 045443
Main Authors: Wundrack, S., Momeni Pakdehi, D., Schädlich, P., Speck, F., Pierz, K., Seyller, T., Schumacher, H. W., Bakin, A., Stosch, R.
Format: Article
Language:English
Subjects:
Amorphization
Buffer layers
Crystal defects
Crystal lattices
Crystal structure
Defect annealing
Epitaxial growth
Graphene
Low concentrations
Monolayers
Raman spectroscopy
Silicon carbide
Spectrum analysis
Temperature dependence
Water chemistry
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Summary:The structural transition of a graphene buffer layer epitaxially grown on 6H silicon carbide (SiC) to quasifreestanding monolayer graphene by intercalation of oxygen and water molecules at low concentrations is studied by temperature-dependent Raman spectroscopy. We present a detailed investigation of the defect density and strain and doping evolution in the graphene crystal lattice. The structural transition from the buffer layer to monolayer graphene with high defect densities occurs at temperatures from 400 to 500 °C, revealing the nanocrystalline regime of stage 2 of the amorphization trajectory, followed by the transition into stage 1 as evidenced by a gradual reduction of defects in graphene during subsequent annealing up to 900 °C.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.99.045443